dm n3008sfg document number: d s 36748 rev. 6 - 2 1 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information 30v n - channel enhancement mode mosfet powerdi product summary v (br)dss r ds(on) max i d max t c = + 25c 3 0v 4. 4m ? @ v gs = 10 v 62 a 5.5 m ? @ v gs = 4 .5v 56 a description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C e nsures on - state los ses are minimized ? small , form factor thermally efficient package enables higher density end products ? occupies only 33% of the board area occupied by so - 8 enabling smaller end product s ? 100% unclamped inductive switch (uis) test in production ? totally lead - fr ee & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound . ul flammab ility classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see d iagram ? terminals: finish ? matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0 72 grams ( a pproxima te ) ordering information (note 4 ) part number case packaging dm n30 08 s fg - 7 powerdi ? 3333 - 8 2 , 0 00 /tape & reel dm n30 08 s fg - 13 powerdi ? 3333 - 8 3 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs ) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : // www.diodes.com/products/packages.html . marking information powerdi ? 3333 - 8 top view bottom view powerdi ? 3333 - 8 n08 = product type marking code yyww = date code marking yy = l ast digit of year (ex: 1 5 = 201 5 ) ww = week code (01 ~ 53) equivalent circuit n 08 y yww powerdi is a registered trademark of diodes incorporated . s s s g d d d d pin 1 d s g
dm n3008sfg document number: d s 36748 rev. 6 - 2 2 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = +25c t a = +70c i d 17.6 14.1 a t<10s t a = +25c t a = +70c i d 23.0 18.4 a steady state t c = +25c t c = +70c i d 62 50 a pulsed drain curren t ( 10 dm 80 a maximu m continuous body diode f orward current (note 6 ) i s 2 a avalanche current , l = 0. 1 mh i as 45 a a valanche energy , l = 0. 1 mh e as 101 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dis sipation (note 5 ) t a = + 25 c p d 0.9 w t a = + 70 c 0.6 thermal resistance, junction to ambient (note 5 ) steady state r ja 13 4 c/w t < 10s 79 c/w total power dissipation (note 6 ) t a = + 25 c p d 2. 1 w t a = + 70 c 1.3 thermal resistance, junction to ambient (note 6 ) steady state r ja 58 c/w t < 10s 3 4 c/w thermal resistance, junction to case (note 6 ) r j c 4 .8 c/w operating and storage temperature range t j, t stg - 55 to + 150 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source bre akdown voltage bv dss 30 gs = 0v, i d = 250a dss ds = 30 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 1 ds = v gs , i d = 250 a ds (on) ? gs = 10 v, i d = 13.5 a gs = 4 .5v, i d = 13.5 a diode forward voltage v sd gs = 0v, i s = 1a dynamic characteristics (note 8 ) input capacitance c iss ds = 10 v, v gs = 0v , f = 1mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ds = 24 v, i d = 27 a total gate charge ( v gs = 10 v ) q g gs gd d(on) dd = 15 v, v gs = 10 v, r l = 1.11 g = 4.7 d = 13.5 a turn - on rise time t r d(off) f rr f = 13.5 a, di/dt= 1 00a/ rr notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6 . devic e mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm n3008sfg document number: d s 36748 rev. 6 - 2 3 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 0 0.5 1 1.5 2 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d v = 1.8v gs v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 10v gs v = 2.5v gs v = 4.0v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.002 0.0025 0.003 0.0035 0.004 0.0045 0.005 0.0055 0.006 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 10v gs 0 0.005 0.01 0.015 0.02 0.025 0.03 0 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = 13.5a d 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 5 10 15 20 25 30 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = v i = 13.5a gs d 10 v = v i = 13.5a gs d 4.5
dm n3008sfg document number: d s 36748 rev. 6 - 2 4 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v i = 13.5a gs d v = v i = 13.5a gs d 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? i = 1ma d i = 250a d v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 100 v = 24v i = a ds d 27 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 10 typical drain-source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a
dm n3008sfg document number: d s 36748 rev. 6 - 2 5 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information v , drain-source voltage (v) ds figure 12 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 100 1000 10000 0 5 10 15 20 25 30 f = 1mhz c iss c oss c rss 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -v , drain-source voltage (v) figure 13 soa, safe operation area ds - i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration times (sec) figure 14 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 136c/w duty cycle, d = t1/ t2 ?? ? ja ja ja
dm n3008sfg document number: d s 36748 rev. 6 - 2 6 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi ? 3333 - 8 powerdi ? 3333 - 8 dim min max t yp a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi ? 3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
dm n3008sfg document number: d s 36748 rev. 6 - 2 7 of 7 www.diodes.com july 2015 ? diodes incorporated d mn3008sfg advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fi tness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its paten t or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indire ctly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written ap proval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when p roperly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perfo rm can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d ev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or sys tems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of dio des incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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